PART |
Description |
Maker |
G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
G618L G61XL G611L G619L |
Tantalum Molded Capacitor; Capacitance: 470uF; Voltage: 2.5V; Case Size: 6x3.2 mm; Packaging: Tape & Reel MULTI-ELEMENT LED LIGHT SOURCE T-1, (3-mm) Round, PCB Mount Right Angle Array, G61XL Series
|
Electronic Theatre Controls, Inc. Instrument Design Engineering Associates ETC[ETC] List of Unclassifed Manufacturers
|
C9004 |
Driver circuit for Si photodiode array
|
HAMAMATSU[Hamamatsu Corporation]
|
G8909-01 G8909 |
InGaAs PIN photodiode array
|
http:// HAMAMATSU[Hamamatsu Corporation] Hamamatsu Photonics
|
C9118-01 C9118 |
Driver circuit for photodiode array with amplifier
|
HAMAMATSU[Hamamatsu Corporation]
|
C911805 |
Driver circuit for photodiode array with amplifier
|
Hamamatsu Corporation
|
PDB-C216 |
Blue Enhanced Linear Array Silicon Photodiode
|
Advanced Photonix, Inc.
|
PDB-C216 |
Blue Enhanced Linear Array Silicon Photodiode
|
List of Unclassifed Manufacturers
|
S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
S8865-64 S8865-128 S8865 |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|